General Description. These N-Channel enhancement mode power field effect. This advanced technology has been especially tailored to. These devices are well. FQP Series. FQPF Series.
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This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. A, March General Description. These N-Channel enhancement mode power field effect. This advanced technology has been especially tailored to. These devices are well.
FQP Series. FQPF Series. V DSS. Drain-Source Voltage. Note 1. V GSS. Gate-Source Voltage. Note 2. I AR Avalanche Current. Note 3. Operating and Storage Temperature Range. Maximum lead temperature for soldering purposes,. Thermal Characteristics. Thermal Resistance, Junction-to-Case. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient. No Preview Available! Electrical Characteristics.
Test Conditions. Min Typ Max Units. Off Characteristics. BV DSS. Drain-Source Breakdown Voltage. Breakdown Voltage Temperature. I DSS. Zero Gate Voltage Drain Current. I GSSF. I GSSR. On Characteristics. V GS th. R DS on. Gate Threshold Voltage. Static Drain-Source. Note 4. Dynamic Characteristics. C iss Input Capacitance. C oss. Output Capacitance.
C rss Reverse Transfer Capacitance. Switching Characteristics. Turn-On Delay Time. Turn-Off Delay Time. Q g Total Gate Charge. Q gs Gate-Source Charge. Q gd Gate-Drain Charge. Note 4, 5. Q rr Reverse Recovery Charge. Repetitive Rating : Pulse width limited by maximum junction temperature. Essentially independent of operating temperature. Fairchild Semiconductor Electronic Components Datasheet. Part Number. View PDF for Mobile. Fairchild Semiconductor.
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