General Description. These N-Channel enhancement mode power field effect. This advanced technology has been especially tailored to. These devices are well. FQP Series. FQPF Series.
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This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. A, March General Description. These N-Channel enhancement mode power field effect. This advanced technology has been especially tailored to. These devices are well.
FQP Series. FQPF Series. V DSS. Drain-Source Voltage. Note 1. V GSS. Gate-Source Voltage. Note 2. I AR Avalanche Current. Note 3. Operating and Storage Temperature Range. Maximum lead temperature for soldering purposes,. Thermal Characteristics. Thermal Resistance, Junction-to-Case. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient. No Preview Available! Electrical Characteristics.
Test Conditions. Min Typ Max Units. Off Characteristics. BV DSS. Drain-Source Breakdown Voltage. Breakdown Voltage Temperature. I DSS. Zero Gate Voltage Drain Current. I GSSF. I GSSR. On Characteristics. V GS th. R DS on. Gate Threshold Voltage. Static Drain-Source. Note 4. Dynamic Characteristics. C iss Input Capacitance. C oss. Output Capacitance.
C rss Reverse Transfer Capacitance. Switching Characteristics. Turn-On Delay Time. Turn-Off Delay Time. Q g Total Gate Charge. Q gs Gate-Source Charge. Q gd Gate-Drain Charge. Note 4, 5. Q rr Reverse Recovery Charge. Repetitive Rating : Pulse width limited by maximum junction temperature. Essentially independent of operating temperature. Fairchild Semiconductor Electronic Components Datasheet. Part Number. View PDF for Mobile. Fairchild Semiconductor.
10N20C Datasheet PDF
FQP10N20C MOSFET. Datasheet pdf. Equivalent