2N3035 DATASHEET PDF

The 2N is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0. It often has a transition frequency of around 3. The frequency at which gain begins to drop off may be much lower, see below. The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CER , and the Collector-Emitter Sustaining voltage, V CEO sus , is given by ON Semiconductor.

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